GaN Systems

GS66516T
Demoboard GS665BTP-REF

High Efficiency CCM Bridgeless Totem Pole PFC Design using GaN E-HEMT

Topology: PFC
Input Voltage (min.): 176.00 V
Input Voltage (max.): 264.00 V
Output 1: 400.00 V / 7.500 A

Original publication on 2017-09-05, revision 170905

Description

The designed PFC evaluation board consists of three major parts. They are the PFC controller daughter board, GS66516T half-bridge daughter board, and the mother board. The PFC control chip is the UCD3138 IC chip from Texas Instruments. The GS66516T devices from GaN Systems are chosen for the fast GaN E-HEMT [3]. The IXFH80N65X2 is chosen for the Si MOSFET switches. The system block diagram is shown in Figure 3.2. The mother board consists of EMI filter, start up circuit, line frequency Si MOSFETs and their gate drive circuits, and voltage and current sensing circuits. The PFC controller daughter board requires 3.3-V input and it includes current, input line voltage and output voltage sampling pins as inputs. The outputs are 4 PWM pins, in which 2 of them are applied to the GaN half bridge and the other 2 are applied to the line frequency Si MOSFETs.

Characteristics

  • Ultra-low FOM Island Technology® die
  • Low inductance GaNPX® package
  • Easy gate drive requirements (0 V to 6 V)
  • Transient tolerant gate drive (-20 / +10 V )
  • Very high switching frequency (> 100 MHz)
  • Fast and controllable fall and rise times
  • Reverse current capability
  • Zero reverse recovery loss
  • Small 9 x 7.6 mm2 PCB footprint
  • Dual gate pads for optimal board layout
  • RoHS 6 compliant

Products

  Order Code SPEC Product series C
(µF)
VR
(V (AC))
RISO
(Ω x F)
DF @ 1 kHz
(%)
DF @ 10 kHz
(%)
dV/dt
(V/µs)
Betriebstemperatur L
(mm)
W
(mm)
H
(mm)
Technische Artikelnummer IR
(A)
L
(mH)
RDC max.
(mΩ)
VT
(V (AC))
Samples
890324026027CS PDF WCAP-FTX2 Film Capacitors 1 275 10000 0.1 0.7 170 -40 °C up to +105 °C 26 11 20 MX2P225105K275ACPP36004
7448042001 PDF WE-CMBNC Common Mode Power Line Choke Nanocrystalline 250 20 1 2.4 1500