GaN Systems


Topology: Other
Switching Frequency (max.): 100000.00 kHz

Original publication on 2018-04-12, revision GSP65RXXHB-EVB UG rev. 180412


This evaluation platform consists up of a motherboard and IMS evaluation modules The IMS evaluation modules are configured as a half bridge and are available in 2 power levels; 2-4kW and 4-7kW. A suitable heatsink is included for lower power applications. For higher power applications additional heatsinking may be required. To prevent device damage, ensure adequate heatsinking through design and by monitoring the component temperatures during operation. To assemble a heatsink, apply thermal grease to the heatsink / IMS board interface before screwing the units together. Enough thermal grease should be applied so that a small amount extrudes on all four sizes as the screws are tightened. Wipe the assembly clean.


  • Ultra-low FOM Island Technology® die
  • Low inductance GaNPX® package
  • Easy gate drive requirements (0 V to 6 V)
  • Transient tolerant gate drive (-20 / +10 V)
  • Very high switching frequency (> 10 MHz)
  • Fast and controllable fall and rise times
  • Reverse current capability
  • Zero reverse recovery loss
  • Small 11 x 9 mm2 PCB footprint
  • Source Sense (SS) pads for optimized gate drive
  • Dual gate and source sense pads for optimal board layout
  • RoHS 6 compliant


  Order Code SPEC Product series H
IR 1
To Tlo
7466213 PDF WP-SMSH SMT with external thread WP-SMSH 8 7 50 M3 5