EPC

EPC1007

Enhancement Mode Power Transistor

Topology: Buck
Output 1: 100.00 V / 6.000 A

Description

Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.

Characteristics

  • Ultra High Efficiency
  • Ultra Low RDS(on)
  • Ultra low QG
  • Ultra small footprint

Products

  Order Code SPEC Product series L
(µH)
IR
(A)
ISAT
(A)
RDC max.
(mΩ)
RDC typ.
(mΩ)
Material LR
(µH)
fres
(MHz)
Samples
7443340100 PDF WE-HCC SMT High Current Cube Inductor 1 17 24 3.9 3.6 Ferrite 0.97 147
7443320220 PDF WE-HCC SMT High Current Cube Inductor 2.2 18 23 4.3 3.9 Ferrite 2 64