Altera

5CSEMA5F31C6N

Cyclone V Device

Topologie: Boost
Schaltfrequenz (max.): 800.00 kHz

Erstveröffentlichung am 30.09.2011, Version 2012.12.28 vom

Beschreibung

The Cyclone® V devices are designed to simultaneously accommodate the shrinking power consumption, cost, and time-to-market requirements; and the increasing bandwidth requirements for high-volume and cost-sensitive applications. Enhanced with integrated transceivers and hard memory controllers, the Cyclone V devices are suitable for applications in the industrial, wireless and wireline, military, and automotive markets.

Merkmale

  • • TSMC's 28-nm low-power (28LP) process technology • 1.1 V core voltage • Wirebond low-halogen packages • Multiple device densities with compatible package footprints for seamless migration between different device densities • RoHS-compliant options

Artikel

  Artikel Nr. SPEC Simu-
lation
Produktfamilie RDC
(mΩ)
L
(µH)
Material IR
(A)
LR
(µH)
ISAT
(A)
fres
(MHz)
Version Pins (Value) P
(mm)
Gender Typ Montageart L
(mm)
IR 1
(A)
Arbeitsspannung (Value)
(V (AC))
Kontaktwiderstand
(mΩ)
Tol. R Z @ 100 MHz
(Ω)
Z @ 1 GHz
(Ω)
RDC max.
(Ω)
RDC1 max.
(Ω)
Zmax
(Ω)
IR 1
(mA)
Muster
744314150 PDF RE WE-HCI SMD-Hochstrominduktivität 4.3 1.5 Superflux 13 1.1 11 110 SMT
62501421621 PDF WR-BHD 2.00 mm Male Box Header 14 2 Männlich Gerade THT 21.2 2 250 20 max.
744311100 PDF RE WE-HCI SMD-Hochstrominduktivität 4.6 1 Superflux 15 0.78 19 85 SMT
742792609 PDF RE WE-CBF SMT-Ferrit High Current SMT 30 40 0.04 0.04 40 3000
742792602 PDF RE WE-CBF SMT-Ferrit High Current SMT 60 110 0.04 0.04 110 3000